Thank you for your reply ,Steve!
I still have two question. Can incident ions with energy as high as MeV be directly simulated ? In addition ,what kind of potential is suitable for silicon carbide, tersoff or MEAM?
Thank you in advance!
guodaxi
Re: Mev - it depends on what potential you
want to use for interaction with the material,
and how small a timestep.
Re: SiC - don't know and again I suggest you
read journal papers. A mail list is a poor substitute
for journals on those kinds of questions.
Ditto for what potential to use at MeV scales.
Steve
2010/11/6 guodaxi <[email protected]...>: