Steve,
I am trying to do some thermal interface problems with silicon and other materials. I tried this program for silicon (4X6X8) with one end fixed using sw potential. When the ensemble shifts to NVE, the temperature is increasing to almost 650K. Below is the code i used for the program. I tried different things like longer NVT (2nanosec's) with a shorter time step, but nothing worked. If i use tersoff potential, i don't have this temp rise problem. I am not sure what the problem is.
units metal
dimension 3
boundary s s s
atom_style atomic
lattice diamond 5.43
region box block 0 4 0 6 0 8
create_box 1 box
create_atoms 1 region box
mass 1 28.01
pair_style sw
pair_coeff * * Si.sw Si
region 8 block INF INF INF INF INF 1.0 units box
group left region 8
velocity all create 10.0 873586443 dist gaussian
fix 1 left setforce 0.0 0.0 0.0
velocity left set 0.0 0.0 0.0 units box
fix 12 all nvt temp 10.0 10.0 0.2 drag 5.0
thermo_style custom temp pe ke press
thermo 10
timestep 0.0005
run 500000
unfix 12
fix 5 all nve
timestep 0.0005
run 2000000
Thanks
Ajit