[lammps-users] Tersoff parameters of Ga-Si and N-Si pairs.

Dear Friends,
I am studying the deposition of semiconductor hetero-interface (III-V on Si substrate). I wonder if there’s any tersoff parameters are ready for Ga(orAl)-Si and Si-N pairs. I knew that tersoff work fine with semiconductor and tersoff’s are ready for Si,Ge,C also for GaN and other III-V are well updated very recently by K. Nordlund, J. Phys.: Condens. Matter, 15, 5649(2003) and D.Powell, M.A.Migliorato and A.G.Cullis, Phys. Rev. B75, 115202, (2007) .
Any help could be appreciate with courtesy…
Regards,
VNT