Dear all,
I try to simulate Silicon Carbide (SiC) with Reaxff potential. I found that there is no potential parameter file considering Si-C bond provided in the Lammps potential directory. Even though I found a series of parameter in a paper by Chenoweth et al., 2005. , 2005, 127 (19), pp 7192–7202. I just copy there supplemental information to make a potential file. The average energy per atom is about -6.8 eve for SiC. I wonder whether someone simulate SiC with that potential? Furthermore, is there any tested potential for SiO2 and SiC with Reaxff?
I tried to use NPT to control the pressure for a structure described with Reaxff, but always encountered “Segmentation fault” error information. I tried several different potential and also changed the atom types both to “C”, and still had that problem. Is there anyone can help me about this?
(sic_reax.lam is the data file for one SiC unit cell
in.reaxc is the input file for lammps
ffield.reax is the default parameters file provided by lammps
ffield.reax.sic is the supplemental information from the 2005 paper
)
Best,
Teng
ffield.reax.budzienSi (21.6 KB)
ffield.reax.sic (7.6 KB)
in.reaxc (462 Bytes)
sic_reax.lam (2.27 KB)