#========================================================================================= # (0) SETTINGS #========================================================================================= variable a0 equal 7.16 variable N equal 2 variable Tini equal "1750." # Initial temperature (K) variable Tfin equal "5200." # Melting temperature (K) variable tstep equal "0.001" # in ps ==> 1 fs variable tdamp equal "v_tstep*100" # variable pdamp equal "v_tstep*1000" # variable out1 equal "10000" # Thermo outputs #========================================================================================= # (I) INITIALIZATION #========================================================================================= units metal # Units are: A (length), ps (time), eV (nrj), g/cm^3 (density)& # force (eV/atom) dimension 3 boundary p p p # Periodic boundary conditions atom_style full # Affects what quantities are stored for each atom (here only the default values) #========================================================================================= # (II) ATOM DEFINITION #========================================================================================= # Creation of a diamond lattice for Si atoms # It means a fcc structure with four additional atoms inside the cell # The O atoms are located at average distance between Si atoms # A diamond lattice can be defined with two basis atoms located at (0,0,0) and a0/4(1,1,1) # and three basis vectors a1 a2 a3 # The Si atoms are on the basis atoms (2) and the O in between (6) # ao, Lattice parameter for beta-cristobalite @ T = 1750 K # Basis vectors (non normalised) a1 a2 a3 lattice custom ${a0} & origin 0. 0. 0. & spacing 1. 1. 1. & a1 0. 0.5 0.5 & a2 0.5 0. 0.5 & a3 0.5 0.5 0. & basis 0. 0. 0. & basis 0.25 0.25 0.25 & basis 0.125 0.125 0.125 & basis 0.125 0.125 0.625 & basis 0.625 0.125 0.125 & basis 0.125 0.625 0.125 region sim_box block 0 ${N} 0 ${N} 0 ${N} units lattice create_box 2 sim_box # Creation of Si atoms on the basis defined in lattice (1&2) and creation of O atoms (3-6) create_atoms 2 region sim_box & basis 1 1 basis 2 1 & basis 3 2 basis 4 2 basis 5 2 basis 6 2 mass 1 28.0855 mass 2 15.9994 group Si type 1 group O type 2 set group Si charge 2.4 set group O charge -1.2 #========================================================================================= # (III) FORCE FIELDS #========================================================================================= pair_style table linear 968 pair_coeff 1 1 pot_SIO2.txt SIO2_1_1 10.17 pair_coeff 1 2 pot_SIO2.txt SIO2_1_2 10.17 pair_coeff 2 2 pot_SIO2.txt SIO2_2_2 10.17 neighbor 2.0 bin neigh_modify delay 0 every 1 check yes pair_write 1 1 968 r 0.5 10.17 table.txt SiSi pair_write 1 2 968 r 0.5 10.17 table.txt SiO pair_write 2 2 968 r 0.5 10.17 table.txt OO #========================================================================================= # (IV) SIMULATION PROCESSES #========================================================================================= # Timestep to make the integration of the motion equation (in ps): here 1 fs timestep ${tstep} # Parameters to print out on the screen and log.lammps file thermo_style custom & step temp etotal enthalpy vol density press thermo ${out1} # Output every N steps #----------------------------------------------------------------------------------------- # (1) HEATING FROM 1700 TO 5200 K #----------------------------------------------------------------------------------------- # Initial velocities velocity all create ${Tini} 458273253 dist gaussian # Timestep to make the integration of the motion equation (in ps): here 1 fs timestep ${tstep} # Heating ramp with the NPT ensemble at zero pressure fix 1 all npt temp ${Tini} ${Tfin} ${tdamp} iso 0.0 0.0 ${pdamp} run 1000000 write_restart restart.heating