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aip.orgtrue10.1063/1.49830662017-05-15Molecular dynamics studies of defect formation during heteroepitaxial growth of InGaN alloys on (0001) GaN surfaces
10.1063/1.4983066http://dx.doi.org/10.1063/1.4983066
doi:10.1063/1.4983066Molecular dynamics studies of defect formation during heteroepitaxial growth of InGaN alloys on (0001) GaN surfacesJ. GruberX. W. ZhouR. E. JonesS. R. LeeG. J. Tuckerdensity functional theorydislocationsdomain boundariesextended defectsgallium compoundsIII-V semiconductorsindium compoundsmelting pointmolecular dynamics methodpolymorphismsemiconductor epitaxial layerssemiconductor growthstacking faultssurface roughnessvapour phase epitaxial growthvoids (solid)wide band gap semiconductors
2017-05-15trueaip.org10.1063/1.4983066
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