Hi all,
I am working on doing some work on sputtering using MD. Previous work of mine has all been normal incidence angles and worried only about yield rate. However, I am now looking at what happens when we change impact angle.
Questions are:
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how to use fix deposit to change impact angle. I know I can use target to specify the area to hit, but isn’t the atom still coming from a region where it is randomly generated within the region? So how can I control the angle from the perpendicular z axis?
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when sputtering often times experimental sputtering yields are less than 1. How can we achieve this? Given many times there is only 1 impact, I assume you would do several 1 off simulations with different positions and get a statistical average? As an alternative, would multiple impacts achieve the same?
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How to track the polar coordinates of outgoing atoms.
Thanks very much.
Carly