Dear colleagues! I have tried to calculate thermal conductivity of amorphous silicon oxide - free standing layer - using fix heat (NEMD). Nevertheless, it was impossible to prepare the sample in equilibrium at the given temperature (e.g. 500 K) by means of “fix all nve” & “fix all qeq/comb”. If no temperature control is applied, the sample starts to heating without any reason. My script is :
make SiO2 amorphous equilibrated at the given temperature
units metal
atom_style charge
boundary s p p
read_data data.silica # “data.silica” is from the LAMMPS-Mail-List
mass 1 28.086
group type1 type 1
compute charge1 type1 property/atom q
compute q1 type1 reduce ave c_charge1
mass 2 16.00
group type2 type 2
compute charge2 type2 property/atom q
compute q2 type2 reduce ave c_charge2
pair_style comb
pair_coeff * * ffield.comb Si O
neighbor 0.5 bin
neigh_modify every 20 delay 0 check no
timestep 0.00020
thermo_style custom step temp etotal pe evdwl ecoul press vol c_q1 c_q2
fix 1 all nve
fix 2 all qeq/comb 1 0.0001
velocity all create 10.0 277387
thermo 10
run 1000