Minimisation criteria

Hi ,
I am doing deposition of si and c on 4H-SiC substrate(physical vapour deposition ) ,i am increasing temprature from 50 K to 300 K and minimising structure by using cg method ,same thing i am doing after increasing temprature from 300 K to 2400 K .
is minimisation is require ? if not why or if yes why .

digvijay

Hi ,
I am doing deposition of si and c on 4H-SiC substrate(physical vapour
deposition ) ,i am increasing temprature from 50 K to 300 K and minimising
structure by using cg method ,same thing i am doing after increasing
temprature from 300 K to 2400 K .
is minimisation is require ? if not why or if yes why .

‚Äčthis is not a question about LAMMPS but about how to do your science. this
is something you need to discuss with your adviser/supervisor, not post to
a mailing list.

axel.‚Äč