Hi Alex,
I am currently learning to use AMSET. I encountered an issue while reproducing the silicon (Si) example. The electron scattering rates of silicon presented in the paper Efficient calculation of carrier scattering rates from first principles are shown in Figure 1.
When I ran the Si example and only considered acoustic deformation potential (ADP) scattering, the scattering rates I obtained are displayed in Figure 2.
There is a factor of two difference between the electron scattering rates from Figure 1 and Figure 2.
Below is the content of my settings.yaml file:
# general settings
scattering_type: [IMP, ADP]
doping: [-1.99e14, -2.20e15, -1.72e16, -1.86e17, -1.46e18, -4.39e18]
temperatures: [300]
bandgap: 1.14
# electronic_structure settings
interpolation_factor: 50
# materials properties
deformation_potential: deformation.h5
elastic_constant:
- [144, 53, 53, 0, 0, 0]
- [ 53, 144, 53, 0, 0, 0]
- [ 53, 53, 144, 0, 0, 0]
- [ 0, 0, 0, 75, 0, 0]
- [ 0, 0, 0, 0, 75, 0]
- [ 0, 0, 0, 0, 0, 75]
static_dielectric:
- [11.7, 0, 0]
- [0, 11.7, 0]
- [0, 0, 11.7]
high_frequency_dielectric:
- [11.7, 0, 0]
- [0, 11.7, 0]
- [0, 0, 11.7]
# performance settings
write_mesh: true
Looking forward to your reply.

