Dear Sir
In the simulation of diamond cutting process (nanometer level), the different crystal planes of single crystal silicon are studied. I have only changed the crystal plane and direction of single crystal silicon. I have not changed the model size of single crystal silicon, but the number of atoms in different crystal planes has changed dramatically. How can I solve this problem? thank you very much for answering my question.
This is the procedure for the work that I set up:
log log.cut
units metal
boundary s s p
atom_style atomic
#工件模型
#lattice diamond 5.431 origin 0.9 0.9 0.9 orient x 0 1 0 orient y 1 0 0 orient z 0 0 -1 #111 -110
lattice diamond 5.431 origin 0.9 0.9 0.9 orient x 1 -1 0 orient y 1 1 1 orient z -1 -1 2 #111 1-10
#lattice diamond 5.431 origin 0.9 0.9 0.9 orient x -1 1 0 orient y 1 1 1 orient z 1 1 -2 #111 -110
region new_w block -80 0 -40 0 0 3 units lattice
region tem_w1 block -82 -81 -40 -0 0 3 units lattice
region tem_w2 block -81 0 -41 -40 0 3 units lattice
region tem_w union 2 tem_w1 tem_w2 units lattice
region bou_w1 block -82 -81 -41 0 0 3 units lattice
region bou_w2 block -82 0 -42 -41 0 3 units lattice
region bou_w union 2 bou_w1 bou_w2 units lattice
region work union 3 new_w tem_w bou_w units lattice
region box block -82 0 -42 0 0 3 units lattice
create_box 3 box
create_atoms 3 region work
group work region work
group new_w region new_w
group tem_w region tem_w
group bou_w region bou_w
set group new_w type 1
set group tem_w type 2
set group bou_w type 3
#原子质量
mass 1 28.0
mass 2 28.0
mass 3 28.0
#mass 4 12.0
Best
Li Qiqi