Have anyone worked on Fix TTM command and knows the values of

- C_e = electronic specific heat (energy/(electron*temperature) units)
- rho_e = electronic density (electrons/volume units)

for silicon?

Regards,

Leyla

Have anyone worked on Fix TTM command and knows the values of

- C_e = electronic specific heat (energy/(electron*temperature) units)
- rho_e = electronic density (electrons/volume units)

for silicon?

Regards,

Leyla

Have anyone worked on Fix TTM command and knows the values of

C_e = electronic specific heat (energy/(electron*temperature) units)

this should be available in the published literature

rho_e = electronic density (electrons/volume units)

this you should be able to compute yourself after a little bit

of thinking what this represents and what material you have.

axel.

Hi....

Am... I dont think the calculation of the charge density as something

trivial .. One would assume "rho = Q/V" , where Q is the charge and

"V" the volume , if we consider the atomic volume of silicon be

equal to 12 cm^3/mol . and 1 mol = 6.02 x10^23 atoms and if each atom

of silicon have 14 electrons, then:

rho = (14 electrons/atom*1.609*10^-19 C/electron)(6.02*10^23

atoms/mol)(1/12 mol/cm^3) = 113005 C/cm^3 or 7.02333*10^23

electrons/cm^3 one could also consider the free electron density if

we consider only the valency electrons (4 valance electrons for

silicon) , then rho_free_electrons = (4 electrons/atom)(6.02*10^23

atoms/mol)(1/12 mol/cm^3) = 2.00667*10^23 free electrons/cm^3 . The

previous result is assuming that the charge is homogenuos i.e Do not

consider Charge Density Distribution The problem become even more

complicate if one consider the distribution of the charge around the

atom (Quantum Mechanics) .

I have no idea what is the electronic specific heat (never hear of it)

, using my physics intuition I would assume the specfic heat is in

someway related with the vibration of the atoms i.e the density of

sates (DOS) , one could consider specific heat due to the vibration

part (phonons), but also a charge contribution due to electron , and

therefore could be phonon electron interaction ....Imagine the atoms

move due to spring (bonding) , but the bonding is due in part to the

electronic charge of the structure, therefore the vibration (motion of

atoms around the equilibrium) would be affected by the electronic

charge distribution .......

Oscar G.

Paul may wish to comment further.

Steve

Thanks for your reply, Just another question, in ttm command, where can I apply the energy or fluence source to the substrate.(J or J/Area)